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Product World Thin Film & Memory Products
TF 2000 E

 FE module |  MR module |  RX module |  DR module |  In-situ compensation |  Dynamic Leakage Current Compensation


FE module 

The FE module is available in different performance levels.
The standard configuration offers a frequency range from 1 mHz to 5 kHz.
A special high speed hardware configuration of Basic Unit and FE-Moddule offers a frequency range up to 1 MHz for high speed applications.

The ferroelectric test module TF Analyzer 2000 FE is designed to make various measurements on ferroelectric materials to determine its main electronic characteristics.

Standard features of the FE-Module are:
  • Hysteresis measurement
  • PUND measurement
  • Fatigue measurement
  • Retention measurement
  • Static hysteresis measurement
  • Imprint measurement
  • Leakage current measurement
and optional
  • C(V) measurement
  • Piezo measurement
  • Pyroelectric measurement
  • Impedance measurement (only with the high speed system configuration)

As further options, which are essentially for testing ultra thin films and for ultra small capacitors, aixACCT offers as unique features of the TF Analyzer 2000 E series:

MR module 

This module allows the investigation of magnetoresistive and ferroic materials. Additional hardware components are required like they are described in the aixMR system documentation. The module supplies a constant current excitation and measures the voltage drop across the sample with a high accuracy four point measurement.

RX module 

The relaxation module TF Analyzer 2000 RX is designed to investigate polarization and depolarization currents of dielectric and ferroelectric materials. This module uses the voltage step method with a six decade current amplifier, which allows measurements without changing the amplification range. It is especially designed to investigate the relaxation behavior and the leakage current of integrated capacitors.

DR module 

Investigation of the self discharge behavior of dielectric materials: voltage pulse method with a charge amplifier offering 30 fF input capacitance.

The DRAM module TF Analyzer 2000 DR is designed to measure the self-discharge behaviour of charged integrated capacitors to test the suitability of the material for DRAM applications and to check the minimum pulse width of a write operation.

In-situ compensation 

With small pad sizes, starting from approximately 10 Ám squared capacitors the influence of the parasitic capacitance becomes increasingly important. For sub micrometer dimensions the compensation is essentially in order to derive correct and precise results. The only way to measure these data correctly is with the aixACCT patented method of a compensation of the influence during the measurement. Using a numerical calculation to compensate this influence does not work, because the recording amplifier is already saturated by the contribution of the parasitic capacitor to the current response.

Dynamic Leakage Current Compensation 

With ultra thin films the influence of leakage current becomes significant on the results of the hysteresis curve of the ferroelectric material. A compensation based on static leakage current measurements is not very accurate and is very time consuming. Therefore a method has been developed by aixACCT to eliminate the influence of the leakage current on the results of the hysteresis curve. Using hysteresis measurements, the influence of the leakage current can be eliminated and the remaining material property is received.

TF 2000 E
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