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TF 2000
FE module | PS module | RX module | DR module | In-situ compensation | Dynamic Leakage Current Compensation
 Features
FE module
The FE module is available in different performance levels.
The standard configuration offers a frequency range from 1 mHz to 1 kHz.
The enhanced configuration offers a frequency range up to 250 kHz.
Since 2005 a new version up to 1 MHz hysteresis frequency has been available for high speed
applications.
The ferroelectric test module TF Analyzer 2000 FE is designed to make various measurements
on ferroelectric materials to determine its main electronic characteristics.
Standard features of the FE-Module are:
- Hysteresis measurement
- PUND measurement
- Fatigue measurement
- Retention measurement
- Static hysteresis measurement
- Imprint measurement
- Leakage current measurement
and optional
- C(V) measurement
- Piezo measurement
- Pyroelectric measurement
- Impedance measurement
As further options, which are essentially for testing ultra thin films and for
ultra small capacitors, aixACCT offers as unique features of the TF Analyzer 2000 series:
PS module
Investigation of the ferroelectric switching kinetics: pulse generation down to 50 ns
pulse width and 1.2 ns rise time.
The pulse switching module - TF Analyzer 2000 PS is designed to measure the switching
velocity of the ferroelectric polarization.
The system gives information on the current response in the 'switching' and the
'non-switching' case of the material. The user is able to investigate the difference
of the polarization point which is reached in the switching case using the fast pulse
switching module of the TF Analyzer 2000 and the point known from the hysteresis
curve recorded with low frequency excitation.
The PS module includes a high precision analog output board, an external probe head
containing the ultra fast switching unit, and the digital time base.
The system offers the test environment for ferroelectric materials close to real
world application like FeRAM. The rise time of the pulses are in the 1 ns regime
at ohmic loads. The minimum pulse width amounts to 50 ns and repetition rates
of 100 kHz are available.
RX module
The relaxation module TF Analyzer 2000 RX is designed to investigate polarization
and depolarization currents of dielectric and ferroelectric materials. This module
uses the voltage step method with a six decade current amplifier, which allows
measurements without changing the amplification range. It is especially designed to
investigate the relaxation behavior and the leakage current of integrated capacitors.
It includes a high precision analog output board, and an external probe head containing
the ultra fast voltage-step generator and the high resolution current amplifier.
DR module
Investigation of the self discharge behavior of dielectric materials: voltage pulse
method with a charge amplifier offering 30 fF input capacitance.
The DRAM module TF Analyzer 2000 DR is designed to measure the self-discharge behaviour
of charged integrated capacitors to test the suitability of the material for
DRAM applications and to check the minimum pulse width of a write operation.
It includes a high precision analog output board, and an external probe head containing
the ultra fast, high insulating switching unit and the electrometer amplifier. The
module uses the voltage-pulse method.
In-situ compensation
With small pad sizes, starting from approximately 10 µm squared capacitors the
influence of the parasitic capacitance becomes increasingly important. For sub
micrometer dimensions the compensation is essentially in order to derive correct
and precise results. The only way to measure these data correctly is with the aixACCT
patented method of a compensation of the influence during the measurement. Using a numerical
calculation to compensate this influence does not work, because
the recording amplifier is already saturated by the contribution of the parasitic
capacitor to the current response.
Dynamic Leakage Current Compensation
With ultra thin films the influence of leakage current becomes significant on
the results of the hysteresis curve of the ferroelectric material. A compensation
based on static leakage current measurements is not very accurate and is
very time consuming. Therefore a method has been developed by aixACCT to eliminate the
influence of the leakage current on the results of the hysteresis curve. Using
hysteresis measurements, the influence of the leakage current can be eliminated and
the remaining material property is received.
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