advanced customized characterization technologies

 
About aixACCT History of Innovations
      2006
    • Unique and patented sample holder for thin film e31,f piezocoefficient measurements utilizing 4-point bending technique
      2005
    • Patent and implementation of a new dynamic leakage current compensation method (DLCC)
    • DLCC is about 100 times faster than conventional static leakage compensation methods
      2003
    • World first measurements on single cell testing on wafer level after full integration on 32 MBit chain FeRAM
      2002
    • Sample holder for high voltage and high temperature application, suitable also for displacement measurements
    • Double laser beam interferometer with a resolution < 1 Picometer
      2001
    • First published direct hysteresis measurement on 200 nm x 200 nm ferroelectric capacitor structures
    • Hysteresis measurement at 1 MHz and 10 MHz by virtual ground testing of 1T1C memory cells
      2000
    • First direct hysteresis measurement on real FeRAM memory cell capacitor
      1999
    • Foundation of the aixACCT Systems GmbH
    • Hysteresis measurement on pad sizes down to 1 μm x 1 μm
      1998
    • Fast pulse switching testing, equal in speed to real operation frequency of a FeRAM
      1997
    • Introduction of static hysteresis measurement
      1994 - 1996
    • Prototypes of RX and DR module of TF ANALYZER 2000 have been used in the DRAM DARPA project to evaluate the suitability of BST for high density memory application
      1995
    • Founded by government funding, assigned to the Chair of Prof. Waser at the RWTH University of Aachen
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